AFM investigation of interface step structures on PVT-grown (0001)Si 6H–SiC crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. The present state of the theory of crystal growth from the melt
2. Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient
3. Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
4. Step bunching behaviour on the {0001} surface of hexagonal SiC
5. Step structures and dislocations of SiC single crystals grown by modified Lely method
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03
2. Stacking Faults in 4H-SiC Single Crystal;Journal of Inorganic Materials;2018
3. Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth;Journal of Crystal Growth;2017-11
4. Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal boules;Journal of Crystal Growth;2015-12
5. Physical Vapor Transport Growth of 4H-SiC on {000-1} Vicinal Surfaces;Materials Science Forum;2015-06
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