Structure and photoluminescence studies of Pr-implanted GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates
2. Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-beam direct write
3. Optical transitions in Pr-implanted GaN
4. Emission channeling studies of Pr in GaN
5. Photoluminescence and cathodoluminescence of GaN doped with Pr
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Room-temperature infrared photoluminescence in GaN doped with various impurities;Optical Materials;2019-08
2. Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium;Journal of Applied Physics;2016-10-28
3. AIN content influence on the properties of AlxGa1−xN doped with Pr ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02
4. Spectroscopic characterization of Praseodymium doped Gallium Nitride powder prepared by a Na flux method;Journal of Alloys and Compounds;2009-12
5. Electrical characterization of Er- and Pr-implanted GaN films;Applied Physics Letters;2005-04-11
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