GSMBE growth and structural characterisation of SiGeC layers for HBT-Reference-Cited by-同舟云学术

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GSMBE growth and structural characterisation of SiGeC layers for HBT

Published:2005-05 Issue:1-4 Volume:278 Page:505-511
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhang J.,Neave J.H.,Li X.B.,Fewster P.F.,El Mubarek H.A.W.,Ashburn P.,Mitrovic I.Z.,Buiu O.,Hall S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

2. Modified GSMBE for higher growth rate and non-selective growth

3. Growth dynamics of Si1−yCy and Si1−x−yGexCy on Si(001) surface from disilane, germane, and methylsilane

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of atomic silicon and germanium beams on the growth kinetics of Si1 – x Ge x layers in Si–GeH4 molecular beam epitaxy;Technical Physics;2017-03

2. Characterization of Semiconductors by X-Ray Diffraction and Topography;Comprehensive Semiconductor Science and Technology;2011

3. Crystalline Layer Structures with X-Ray Diffractometry;Springer Handbook of Crystal Growth;2010

4. Substitutional C effect on generation lifetime in MBE-grown SiGeC layers;Semiconductor Science and Technology;2008-12-18

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