Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. J.J. Coleman, IEEE J. Select. Topics Quantum Electron. 6 (2000) 1008 and references therein.
2. Strained‐layer quantum‐well injection laser
3. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
4. Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
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