Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM-Reference-Cited by-同舟云学术

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Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM

Published:2004-06 Issue:4 Volume:266 Page:519-522
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Xiao Jingzhong,Yin Shaotang,Shao Manjun,Zhang Xiyi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Direct Observation of Ferroelectric Domains in LiTaO3Using Environmental Scanning Electron Microscopy

2. L. Jiang, M. Shao, Proceedings of the Eighth Beijing Conference and Exhibition on Instrument Analysis, 1999, pp. A21–22.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cavity Etching Behavior on the M‐Plane of Sapphire Crystal;Crystal Research and Technology;2022-09-09

2. Convolutional neural network for sapphire ingots defect detection and classification;Optical Materials;2021-09

3. Dislocation Etching Morphology on the A Plane of Sapphire Crystal;Crystal Research and Technology;2021-06-12

4. Chemical Etching of Dislocations Process on Sapphire;Advanced Materials Research;2012-09

5. Tridimensional morphology and kinetics of etch pit on the {0001} plane of sapphire crystal;Journal of Solid State Chemistry;2012-08

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