Self assembled (In,Ga)As quantum structures on GaAs (411)A
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A
2. Reconstruction of the GaAs (311)Asurface
3. The importance of high-index surfaces for the morphology of GaAs quantum dots
4. Molecular-beam epitaxial growth and surface characterization of GaAs(311)B
5. InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy
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1. Evolution of Self-Assembled InGaAs Tandem Nanostructures Consisting a Hole and Pyramid on Type-A High-Index GaAs Substrates by Droplet Epitaxy;IEEE Transactions on Nanotechnology;2011-05
2. InxGa1−xAs quantum wire network-like and ordered checker board-like nanostructures on GaAs (311) by low In composition multi-layer stacking;physica status solidi (a);2010-11-15
3. Temperature dependence of the optical properties of InAs quantum dots with bimodal size evolution grown on GaAs (115)A substrate;Physica B: Condensed Matter;2010-01
4. Advances in nonpolar ZnO homoepitaxy: 1D surface nanostructure and electron transport;SPIE Proceedings;2007-02-08
5. One-DimensionalSemiconductor and OxideNanostructures;Nanotubes and Nanofibers;2006-06-20
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