Temperature dependence of the optical properties of InAs quantum dots with bimodal size evolution grown on GaAs (115)A substrate
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Spontaneous localization in InAs/GaAs self-assembled quantum-dot molecules
2. Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40 Gbit/s
3. High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation
4. Ensemble interactions in strained semiconductor quantum dots
5. Intraband absorption in n-doped InAs/GaAs quantum dots
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1. Hydrostatic and biaxial strain effect on electronic properties of (In,Ga)As capped InAs/GaAs (113)A quantum dots;2024-02-01
2. Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants;Materials Research Express;2018-10-26
3. Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 μm wavelength;International Journal of Modern Physics B;2016-08-18
4. Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates;Chinese Physics Letters;2016-04
5. A review on fluorescent inorganic nanoparticles for optical sensing applications;RSC Advances;2016
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