Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatment
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes
3. Effect of surface treatment on surface recombination velocity and diode leakage current in GaP
4. Perimeter and bulk recombination currents in GaAs homojunction diodes and heterojunction bipolar transistors after surface processing
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1. Reduction of surface leakage current of InAs/GaSb long-wavelength superlattice detectors using SiO2 and anodic sulfide composite passivation;Materials Science in Semiconductor Processing;2023-09
2. State-of-the-art of polyimide films reinforced with fullerene-design, features and applications;Journal of Thermoplastic Composite Materials;2023-04-26
3. Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes;ST PETER POLY U J-PH;2023
4. Performance of passivation layer for InP/InGaAs based short-wave infrared photodetector;Physica B: Condensed Matter;2022-12
5. Avalanche photodiodes based on InAlAs/InGaAs heterostructures with sulfide–polyamide passivation of mesa structures;Journal of Optical Technology;2022-11-01
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