The effect of substrate polarity on the growth of InN by RF-MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy
2. High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy
3. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
4. Growth of Thick InN by Molecular Beam Epitaxy
5. Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
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1. A molten salt-based nitridation approach for synthesizing nanostructured InN electrode materials;RSC Advances;2020
2. Correlation of Threading Dislocations with the Electron Concentration and Mobility in InN Heteroepitaxial Layers Grown by MBE;ECS Journal of Solid State Science and Technology;2019-10-11
3. N-polar III-nitride transistors;III-Nitride Electronic Devices;2019
4. Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2017-05
5. Investigation of thin InN/GaN heterostructures within situSiNxdielectric grown by plasma-assisted molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03
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