Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
3. GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm
4. Group III nitride–arsenide long wavelength lasers grown by elemental source molecular beam epitaxy
5. InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor
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1. Formation InAs Quantum Dots in a Matrix GaAs in Kinetic Mode for CVD-method;Journal of Nano- and Electronic Physics;2017
2. Misfit dislocations and stress in In1 − x Ga x As/GaAs heterostructures;Inorganic Materials;2011-07-20
3. Below bandgap emission with intensity higher than band-to-band transition in GaAsN;physica status solidi (c);2008-02
4. Thermal annealing effect on GaNAs epilayers with different nitrogen compositions grown by MOCVD;Journal of Crystal Growth;2007-09
5. 1.31 μm GaAs-based heterojunction p–i–n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy;Thin Solid Films;2007-03
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