Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates
2. Molecular-beam epitaxial growth of GaAs and InGaAs/GaAs nanodot arrays using anodic Al2O3 nanohole array template masks
3. Selective growth and associated faceting and lateral overgrowth of GaAs on a nanoscale limited area bounded by a SiO2 mask in molecular beam epitaxy
4. Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting
5. Resonant self-organization in semiconductor growth
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