InN grown by remote plasma-enhanced chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. K.S.A. Butcher, Afifuddin, P.P.T. Chen, E.M. Goldys, T.L. Tansley, Phys. Stat. Sol. A 188 (2001) 667.
3. www.nist.gov/srd/jcpds.htm.
4. Rietveld refinement for indium nitride in the 105–295 K range
5. Improvement on epitaxial grown of InN by migration enhanced epitaxy
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1. A molten salt-based nitridation approach for synthesizing nanostructured InN electrode materials;RSC Advances;2020
2. Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C;Japanese Journal of Applied Physics;2017-05-26
3. Investigation of oxygen defects in wurtzite InN by using density functional theory;Journal of Crystal Growth;2016-12
4. Synthesis of particulate InN crystal by the reaction of InCl3 with LiNH2;Journal of the Ceramic Society of Japan;2012
5. Recent advances in the MOVPE growth of indium nitride;physica status solidi (a);2009-12-10
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