Investigation of oxygen defects in wurtzite InN by using density functional theory-Reference-Cited by-同舟云学术

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Investigation of oxygen defects in wurtzite InN by using density functional theory

Published:2016-12 Issue: Volume:456 Page:168-173
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hattori Y.,Chubaci J.F.D.,Matsuoka M.,Freitas J.A.,da Silva A. Ferreira

Funder

Brazilian agencies FAPESB/PRONEX, CNPq and FAPESP

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. Optical band gap of indium nitride;Tansley;J. Appl. Phys.,1986

2. Temperature dependence of band gap change in InN and AlN;Guo;Jpn. J. Appl. Phys.,1994

3. Unusual properties of the fundamental bandgap of InN;Wu;Appl. Phys. Lett.,2002

4. M. Kumar, G. Baldissera, C. Persson, D. David, M. da Silva, J.A. Freitas Jr, J. Tischler, J. Chubaci, M. Matsuoka, A. Ferreira da Silva, Bulk properties of InN films determined by experiments and theory, Journal of Crystal Growth 403, 2014, pp. 124–127. 8th International Workshop on Bulk Nitrides Semiconductors (IWBNS VIII).

5. Concentration dependence of the absorption coefficient for n- and p-type GaAs between 1.3 and 1.6eV;Casey;J. Appl. Phys.,1975

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2. Large Area Ultrathin InN and Tin Doped InN Nanosheets Featuring 2D Electron Gases;ACS Nano;2022-04-04

3. Bandgap and Electronic Structure Determination of Oxygen-Containing Ammonothermal InN: Experiment and Theory;The Journal of Physical Chemistry C;2019-03-07

4. The role of Cr on the electronic and optical properties of InCrN: A first principles study;Journal of Crystal Growth;2018-10

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