Author:
Fulem M.,Růžička K.,Růžička V.,Hulicius E.,Šimeček T.,Pangrác J.,Rushworth S.A.,Smith L.M.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. D.M. Frigo, A.W. Gall, U.S. patent 5,232,869, 1993.
2. K. Sanoyoshi, T. Yago, Japan patent JP 1-265,511, 1989.
3. G.R. Antell, UK patent GB 2,223,509, 1990.
4. An improved method of trimethylindium transport for the growth of indium phosphide and related alloys by MOVPE
5. Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III–V compounds
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