Nanolaminated Al2O3–TiO2 thin films grown by atomic layer deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. High permittivity thin film nanolaminates
2. Excellent thermal stability of Al2O3/ZrO2/Al2O3 stack structure for metal–oxide–semiconductor gate dielectrics application
3. Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates
4. Properties of Ta2 O 5‐Based Dielectric Nanolaminates Deposited by Atomic Layer Epitaxy
5. Sequential surface chemical reaction limited growth of high quality Al2O3dielectrics
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