Growth of strained GaAsSb layers on GaAs (001) by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Nitrogen incorporation in (GaIn)(NAs) for 1.3μm VCSEL grown with MOVPE
2. The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimony
3. OMVPE growth of GaAs1-xSbx: solid composition
4. Growth of GaAs1−x Sbx by organometallic vapor phase epitaxy
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2. Sb dissociative surface coverage model for incorporation of antimony in GaAsSb layers grown on GaAs (0 0 1) substrates;Journal of Crystal Growth;2019-11
3. Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM;Journal of Crystal Growth;2019-10
4. Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing;Applied Surface Science;2018-11
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