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Effect of InxGa1−xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots

  • Published:2005-03 Issue:3-4 Volume:275 Page:415-421
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Lim J.G.,Park Y.J.,Park Y.M.,Song J.D.,Choi W.J.,Han I.K.,Cho W.J.,Lee J.I.,Kim T.W.,Kim H.S.,Park C.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data;IEEE Transactions on Nanotechnology;2009-05

2. Quantum Dots for Sensing;Sensors Based on Nanostructured Materials;2008-09-10

3. Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2008-04

4. Quantum Dot Charge and Spin Memory Devices;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008

5. Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy;Journal of Crystal Growth;2005-11
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