Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT-Reference-Cited by-同舟云学术

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Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT

Published:2023-03 Issue: Volume:605 Page:127083
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

An Yunlai,Zhang Wenting,Tang Xinling,Niu Xiping,Wang Liang,Yang Xiaolei,Shen Zhanwei,Sun Junmin,Sang Ling,Liu Rui,Du Zechen,Luo Weixia,Li Ling,Chen Zhongyuan,Wei Xiaoguang,Yang Fei

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Jayant Baliga, Comparison of 6H-SiC, 3C-SiC, and Si for power devices;Mohit Bhatnagar;Electron Devices IEEE Transactions,1993

2. A Survey of Wide Bandgap Power Semiconductor Devices;Millan;IEEE Trans. Power Electron.,2014

3. Development of Ultrahigh-Voltage SiC Devices;Fukuda;IEEE Trans. Electron Devices,2015

4. Silicon carbide: A unique platform for metal-oxide-semiconductor physics;Liu;Appl. Phys. Rev.,2015

5. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC;Micromachines;2024-04-29

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