Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater-Reference-Cited by-同舟云学术

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Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Published:2024-01 Issue: Volume:626 Page:127488
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nguyen Thi-Hoai-Thu,Chen Jyh-Chen

Funder

National Science and Technology Council

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. Effect of oxygen precipitation on the performance of Czochralski silicon solar cells;Chen;Sol. Energ. Mater Sol. Cells,2011

2. Oxygen in Czochralski silicon used for solar cells;Yang;Sol. Energ. Mater Sol. Cells,2002

3. Numerical study on the effects of inner crucible window heights on the growth of silicon in a continuous Czochralski process;Su;J. Cryst. Growth,2023

4. Control of oxygen impurities in a continuous-feeding Czochralski silicon crystal growth by the double-crucible method;Zhao;Crystals,2021

5. Role of crucible partition in improving Czochralski melt conditions;Jafri;J. Cryst. Growth,1995

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. LBM modeling of three-dimensional mixed convection in CZ crystal growth on curvilinear coordinates system;Results in Physics;2024-06

2. Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth using an optimized heating zone with dual side-heaters;CrystEngComm;2024

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