Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD-Reference-Cited by-同舟云学术

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Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

Published:2018-05 Issue: Volume:490 Page:19-24
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kakkerla Ramesh Kumar,Anandan Deepak,Hsiao Chih-Jen,Yu Hung Wei,Singh Sankalp Kumar,Chang Edward Yi

Funder

TSMC

NCTU-UCB I-RiCE program

Ministry of Science and Technology, Taiwan

National Chung-shan Institute of Science & Technology Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference46 articles.

1. III–V compound SC for optoelectronic devices;Mokkapati;Mater. Today.,2009

2. Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application;Hsiao;Appl. Phys. Lett.,2017

3. High-power (>10 mW) superluminescent diodes by using active multimode interferometer;Zang;IEEE Photon. Technol. Lett.,2010

4. Thermal resistance reduction in high power superluminescent diodes by using active multi-mode interferometer;Zang;Appl. Phys. Lett.,2012

5. Nanowire photonics;Yan;Nat. Photonics,2009

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3. Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor;Engineering Research Express;2020-07-13

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5. Simulation and Optimization of Temperature Field in Large-Sized MOCVD Reactor by Resistance Heating;IOP Conference Series: Materials Science and Engineering;2019-05-01

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