High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (1 1 0) Si substrates grown by ammonia molecular beam epitaxy
Author:
Funder
Hanyang University
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Microwave performance of AlGaN/GaN inverted MODFET's
2. Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz
3. Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
4. Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy
5. Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy
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1. Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2023-05-12
2. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25
3. Analytically Modeling the Effect of Buffer Charge on the 2DEG Density in AlGaN/GaN HEMT;IEEE Transactions on Electron Devices;2023
4. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs;Sensors;2022-02-15
5. The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2021-12
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