Molecular dynamics simulation of interfacial growth of SiC from Si–C solution on different growth planes-Reference-Cited by-同舟云学术

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Molecular dynamics simulation of interfacial growth of SiC from Si–C solution on different growth planes

Published:2018-07 Issue: Volume:494 Page:36-43
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Narumi Taka,Shibuta Yasushi,Yoshikawa Takeshi

Funder

Grant-in-Aid for Scientific Research (B)

Grant-in-Aid for JSPS Fellows

MEXT, Japan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Bulk and epitaxial growth of silicon carbide

3. Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals

4. High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

5. Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique

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1. Atomistic insights into chemical vapor deposition process of preparing silicon carbide materials using ReaxFF-MD simulation;Computational Materials Science;2024-05

2. Investigation and modeling of orientation-determined removal characteristics of KDP crystal in microemulsion abrasive-free jet polishing from nano to macro scale;Optical Materials Express;2023-12-06

3. Review of solution growth techniques for 4H-SiC single crystal;China Foundry;2023-03

4. Molecular Dynamics Simulation Studies of Properties, Preparation, and Performance of Silicon Carbide Materials: A Review;Energies;2023-01-20

5. The Effect of Temperature on Silicon Nucleation from Melt in Seed-assisted Growth — a Molecular Dynamics Study;Silicon;2022-07-23

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