Growth temperature optimization of GaAs-based In 0.83 Ga 0.17 As on In x Al 1 − x As buffers-Reference-Cited by-同舟云学术

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Growth temperature optimization of GaAs-based In 0.83 Ga 0.17 As on In x Al 1 − x As buffers

Published:2018-04 Issue: Volume:488 Page:51-56
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen X.Y.,Gu Y.,Zhang Y.G.,Ma Y.J.,Du B.,Zhang J.,Ji W.Y.,Shi Y.H.,Zhu Y.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Shanghai Rising-Star Program

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Extended-wavelength InGaAs-on-GaAs infrared focal-plane array;Merken;Electron. Lett.,2002

2. Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors;Zimmermann;Appl. Phys. Lett.,2003

3. Dark current characteristics of GaAs-based 2.6 μm InGaAs photodetectors on different types of InAlAs buffer layers;Zhou;J. Phys. D: Appl. Phys.,2014

4. Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors;Gu;J. Cryst. Growth,2013

5. GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy;Chen;J. Cryst. Growth,2014

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1. Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells;Nanomaterials;2024-03-27

2. Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors;Materials;2023-06-23

3. InGaAs/AlAs/GaAs metamorphic asymmetric spacer layer tunnel (mASPAT) diodes for microwaves and millimeter-waves detection;Journal of Applied Physics;2020-05-21

4. Interpretation of photoluminescence spectra of metamorphic InAlAs/GaAs heterostructures;Journal of Physics: Conference Series;2019-12-01

5. LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE;Crystals;2019-11-28

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