Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers-Reference-Cited by-同舟云学术

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Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers

Published:2018-04 Issue: Volume:488 Page:8-15
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chong Haining,Wang Zhewei,Chen Chaonan,Xu Zemin,Wu Ke,Wu Lan,Xu Bo,Ye Hui

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Research Foundation of State Key Laboratory of Modern Optical Instrumentation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. High-performance silicon photonics technology for telecommunications applications

2. Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

3. Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis

4. Enhanced photoluminescence of heavily n-doped germanium

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1. Effects of phosphorous and antimony doping on thin Ge layers grown on Si;Scientific Reports;2024-04-04

2. Ultrahigh-Quality Ge-on-Glass with a 3.7% Uniaxial Tensile Strain;ACS Omega;2024-02-14

3. Ultrahigh-Quality Ge-on-Glass with a 3.7% Uniaxial Tensile Strain;ACS OMEGA;2024

4. Effects of phosphorous and antimony doping on thin Ge layers grown on Si;2024-01-16

5. Laser-Crystallized Epitaxial Germanium on Silicon-Based Near-Infrared Photodetector;IEEE Sensors Journal;2022-06-15

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