Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer-Reference-Cited by-同舟云学术

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Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer

Published:2013-05 Issue: Volume:370 Page:114-119
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jeong Joocheol,Jang Jongjin,Hwang Jungwhan,Jung Chilsung,Kim Jinwan,Lee Kyungjae,Lim Hyoungjin,Nam Okhyun

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

2. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

3. Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells

4. Nitride emitters go nonpolar

5. Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

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1. Improved characteristics of (112‾2) Al0.62Ga0.38N film grown with pulsed flow growth technique;Materials Science in Semiconductor Processing;2024-10

2. Enhanced structural and optical properties of semipolar (112¯2) AlGaN film with insertion of AlN/AlGaN superlattice;Journal of Vacuum Science & Technology A;2023-07-26

3. The effect of ammonia partial pressure on the growth of semipolar (11–22) InGaN/GaN MQWs and LED structures;Materials Science and Engineering: B;2023-05

4. Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar (112¯2) AlGaN films;Applied Surface Science;2023-01

5. Crystalline orientation and anisotropy of semi-polar GaN films grown on m-sapphire substrate by hydride vapor phase epitaxy;Journal of Crystal Growth;2022-10

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