Fabrication and characterization of high efficiency green nanopillar LED-Reference-Cited by-同舟云学术

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Fabrication and characterization of high efficiency green nanopillar LED

Published:2013-05 Issue: Volume:370 Page:332-335
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ju Jin-Woo,Hyeob Baek Jong,Lee Seung-Jae,Jeon Dae-Woo,Park Jae-Woo,Choi Jung-Hun,Jang Lee-Woon,Lee In-Hwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Recombination dynamics in InGaN quantum wells

2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

3. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

4. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

5. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Uniformity of Current Distribution in Nanohole Light-Emitting Diode;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06

2. Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs;Applied Surface Science;2017-07

3. Influence of p-GaN shape on the light emission characteristics of InGaN nanodisk embedded p-i-n GaN nanorods;Current Applied Physics;2015-09

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