NH3-free growth of GaN nanostructure on n-Si (111) substrate using a conventional thermal evaporation technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells
2. The Controlled Growth of GaN Nanowires
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5. Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on α-SiC and sapphire
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3. RETRACTED: Growth and characterization of GaN nanoparticles on P-type Si (100) substrate by plasma focus device with nitrogen plasma;International Journal of Hydrogen Energy;2017-03
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