Preparation of the c-axis oriented AlN film by laser chemical vapor deposition using a newly proposed Al(acac)3 precursor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Epitaxial growth of single-crystalline AlN films on tungsten substrates;Li;Applied Physics Letters,2006
2. Study of in-plane orientation of epitaxial AlN films grown on (111) SrTiO3;Yao;Applied Physics Letters,2008
3. Effect of initial process conditions on the structural properties of AlN films;Paduano;Journal of Crystal Growth,2004
4. Growth of nonpolar AlN (11−20) and (1−100) films on SiC substrates by flow-rate modulation epitaxy;Akasaka;Applied Physics Letters,2007
5. Low-temperature epitaxial growth of AlN films on sapphire by electron cyclotron resonance plasma-assisted chemical vapor deposition;Zhang;Journal of Crystal Growth,1993
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