Growth of AlN Crystals on SiC Substrates by Thermal Nitridation of Al2 O3
Author:
Affiliation:
1. Institute of Multidisciplinary Research for Advanced Materials; Tohoku University; 2-1-1 Katahira Aoba-ku Sendai 980-8577 Japan
2. Department of Electrical and Electronic Engineering; Mie University; 1577 Kurima-machiya Tsu Mie 514-8507 Japan
Funder
Cabinet Office, Government of Japan
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.13183/fullpdf
Reference19 articles.
1. Properties of the State of the Art of Bulk III-V Nitride Substrates and Homoepitaxial Layers;Jaime;J. Phys. D: Appl. Phys.,2010
2. Study of In-Plane Orientation of Epitaxial AlN Films Grown on (111) SrTiO3;Yao;Appl. Phys. Lett.,2008
3. High Quality AlN Grown on SiC by Metal Organic Chemical Vapor Deposition;Chen;Appl. Phys. Lett.,2008
4. Investigation of AlN Films Grown by Molecular Beam Epitaxy on Vicinal Si(111) as Templates for GaN Quantum Dots;Benaissa;Appl. Phys. Lett.,2006
5. AlN Single Crystals;Slack;J. Cryst. Growth,1977
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Conditions for growth of AlN single crystals in Al-Sn flux;Journal of the American Ceramic Society;2018-06-19
2. Growth mechanism of AlN crystals via thermal nitridation of sintered Al2O3–ZrO2 plates;Ceramics International;2016-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3