Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111)
2. Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates
3. GaN MSM Ultraviolet Photodetectors with Transparent and Thermally Stable RuO[sub 2] and IrO[sub 2] Schottky Contacts
4. GaN MESFETs on (111) Si substrate grown by MOCVD
5. Unusual properties of the fundamental band gap of InN
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of well-oriented InN nanodots by magnetron sputtering with varying sputtering temperature;Journal of Vacuum Science & Technology B;2018-07
2. Catalyst free growth of high density uniform InN nanocolumns on p-GaAs(001) surface by PA-MBE and their in situ XPS analysis;Applied Surface Science;2015-03
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