Author:
Abadier M.,Berechman R.A.,Neudeck P.G.,Trunek A.J.,Skowronski M.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. N-channel 3C-SiC MOSFETs on silicon substrate;Wan;IEEE Electron Device Letters,2002
2. The electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide;Ohshima;Japanese Journal Of Applied Physics,2003
3. Fabrication and Characterization of 3C-SiC-Based MOSFETs;Schöner;Chemical Vapor Deposition,2006
4. Homoepitaxial and heteroepitaxial growth on step-free SiC mesas;Neudeck,2004
5. Some recent progress in 3C-SiC growth;Polychroniadis;Journal of Optoelectronics and Advanced Materials,2004
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2 articles.
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