Doping induced lattice misfit in 4H–SiC homoepitaxy-Reference-Cited by-同舟云学术

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Doping induced lattice misfit in 4H–SiC homoepitaxy

Published:2012-06 Issue:1 Volume:349 Page:43-49
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kallinger Birgit,Berwian Patrick,Friedrich Jochen,Müller Georg,Weber Arnd-Dietrich,Volz Eduard,Trachta Gerd,Spiecker Erdmann,Thomas Bernd

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

2. Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs

3. Doping-induced strain and relaxation of Al-doped 4H-SiC homoepitaxial layers

4. High-resolution X-ray diffraction and optical absorption study of heavily nitrogen-doped 4H–SiC crystals

5. Doping-induced strain in N-doped 4H–SiC crystals

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of basal plane dislocations by stress near epilayer/substrate interface of large-diameter SiC wafers with thick epitaxial layers;Journal of Applied Physics;2024-06-17

2. Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder;CrystEngComm;2022

3. Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

4. Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades;Crystal Research and Technology;2019-09-30

5. Reducing warpage of thick 4H-SiC epitaxial layers by grinding the back of the substrate;Japanese Journal of Applied Physics;2019-02-25

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