Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
3. Investigation of growth processes of ingots of silicon carbide single crystals
4. SiC MATERIAL PROPERTIES
5. Progress in controlling the growth of polytypic crystals
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