Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5μm using aberration-corrected scanning transmission electron microscopy-Reference-Cited by-同舟云学术

Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5μm using aberration-corrected scanning transmission electron microscopy

Published:2011-08 Issue:1 Volume:329 Page:57-61
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kadkhodazadeh S.,Semenova E.S.,Yvind K.,Dunin-Borkowski R.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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1. Wavelength Blue-Shifting and Gain Spectral Bandwidth of InAs/InP Quantum Dots for Laser Applications Around $1.55~\mu$ m;IEEE Journal of Quantum Electronics;2018-02

2. Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range;Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI;2014-02-19

3. High resolution STEM of quantum dots and quantum wires;Micron;2013-01

4. Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm;Applied Physics Letters;2011-09-05