Strain control of InGaAs/AlAs/AlAsSb quantum wells by interface termination method between AlAs and AlAsSb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Ultrafast all-optical switching at 1.3 [micro sign]m/1.55 [micro sign]m using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions
2. Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs–AlAs–AlAsSb Coupled Quantum Wells
3. Room temperature ∼3.3 [micro sign]m InP-based InGaAs/AlAs(Sb) quantum cascade lasers
4. Effect of group-V species exchange at the interfaces of InGaAs/AlAsSb superlattice
5. Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence of GaAsSb/AlAsSb superlattices for investigating band structure;Journal of Luminescence;2023-11
2. An atomic scale study of surface termination and digital alloy growth in InGaAs/AlAsSb multi-quantum wells;Journal of Physics: Condensed Matter;2016-05-26
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