Some remarks on the undercooling of the Si(111) facet and the “Monte Carlo modeling of silicon crystal growth” by Kirk M. Beatty & Kenneth A. Jackson, J. Crystal Growth 211 (2000) 13
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Monte Carlo modeling of silicon crystal growth;Beatty;J. Cryst. Growth,2000
2. Grain growth behaviors of polycrystalline silicon during melt growth processes;Fujiwara;J. Cryst. Growth,2004
3. On the twinning occurrence in bulk semiconductor crystal growth;Nadri;Scripta Mater.,2010
4. Velocity versus temperature relation for solidification of silicon: a molecular-dynamics study;Kluge;Phys. Rev. B,1989
5. Kinetic coefficient of steps at the Si(111) crystal-melt interface from molecular dynamics simulations;Buta;J. Chem. Phys.,2007
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