Interplay between facetting and confinement in directional solidification of silicon: A direct comparison between experiments and phase-field simulations-Reference-Cited by-同舟云学术

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Interplay between facetting and confinement in directional solidification of silicon: A direct comparison between experiments and phase-field simulations

Published:2024-01 Issue: Volume:626 Page:127458
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Braik Terkia^ORCID,Mangelinck-Noël Nathalie^ORCID,Reinhart Guillaume^ORCID,Debierre Jean-Marc

Funder

Agence Nationale de la Recherche

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference41 articles.

1. ©Fraunhofer ISE: Photovoltaics Report, updated: 6 December 2022.

2. Growth and defects in cast-mono silicon for solar cells: A review;Huang;Phys. Status Solidi A,2022

3. The emergence of high-performance multi-crystalline silicon in photovoltaics;Lan;J. Cryst. Growth,2017

4. Seed-assisted growth of cast-mono silicon for photovoltaic application: Challenges and strategies;Wang;Solar RRL,2020

5. In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si;Tsoutsouva;Acta Mater.,2016

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