Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography-Reference-Cited by-同舟云学术

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Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Published:2012-08 Issue:1 Volume:353 Page:1-4
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bengoechea-Encabo A.,Albert S.,Sanchez-Garcia M.A.,López L.L.,Estradé S.,Rebled J.M.,Peiró F.,Nataf G.,de Mierry P.,Zuniga-Perez J.,Calleja E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

2. Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy

3. InGaN/GaN nanorod array white light-emitting diode

4. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

5. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective area growth of high quality GaN nanocolumns on Si(0 0 1) by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2023-12

2. Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy;Journal of Crystal Growth;2023-09

3. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01

4. Silicon-based microhole arrays for spectral tuning of white light emitted from InGaN nanocolumns grown by molecular-beam epitaxy;Journal of Crystal Growth;2020-09

5. Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes;Crystal Growth & Design;2020-06-04

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