High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy-Reference-Cited by-同舟云学术

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High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

Published:2011-12 Issue:1 Volume:337 Page:93-96
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lyamkina A.A.,Abramkin D.S.,Dmitriev D.V.,Gulyaev D.V.,Gutakovsky A.K.,Moshchenko S.P.,Shamirzaev T.S.,Toropov A.I.,Zhuravlev K.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Zh.M. Wang (Ed.), Lecture Notes in Nanoscale Science and Technology: Self-Assembled Quantum Dots, Springer, New York, 2008.

2. Efficient Near-Infrared Polymer Nanocrystal Light-Emitting Diodes

3. Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix

4. Coexistence of direct and indirect band structures in arrays of InAs∕AlAs quantum dots

5. Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces;Nanotechnology;2020-09-15

2. Numerical Investigation of Surface Plasmon Resonance in Lens-Shaped Self-Assembled Nanodroplets of Group III Metals;The Journal of Physical Chemistry C;2013-07-31

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