Reduction of oxygen impurity at GaN/β-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux-Reference-Cited by-同舟云学术

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Reduction of oxygen impurity at GaN/β-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux

Published:2011-07 Issue:1 Volume:327 Page:272-275
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kumar Mahesh,Rajpalke Mohana K.,Roul Basanta,Bhat Thirumaleshwara N.,Dash S.,Tyagi A.K.,Kalghatgi A.T.,Krupanidhi S.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

3. Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

4. Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations

5. Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

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1. Industrial applications of X-Ray Photoelectron Spectroscopy (XPS) in India;Journal of Electron Spectroscopy and Related Phenomena;2019-02

2. Decoupling the Two Roles of Ga Droplets in the Self-Catalyzed Growth of GaAs Nanowires on SiOx/Si(111) Substrates;Crystal Growth & Design;2017-09-25

3. Binary group III-nitride based heterostructures: band offsets and transport properties;Journal of Physics D: Applied Physics;2015-09-24

4. Epitaxial rare earth oxide and nitride buffers for GaN growth on Si;physica status solidi (c);2014-01-24

5. XPS characterization of single crystalline SrLaGa3O7:Nd;Applied Surface Science;2013-10

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