Effects of growth pressure on the properties of p-GaN layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Self-compensation in Mg doped p-type GaN grown by MOCVD
2. MOVPE growth and characterization of Mg-doped GaN
3. The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN:Mg grown by MOVPE
4. Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy
5. Delta-doping optimization for high quality p-type GaN
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN;Nanoscale Research Letters;2020-02-10
2. Preparing GaN nanowires on Al2O3 substrate without catalyst and its optical property;Acta Physica Sinica;2020
3. Cp2Mg in-situ monitoring in a MOVPE reactor using a quantum cascade laser;Japanese Journal of Applied Physics;2019-05-01
4. Solving the problem of gallium contamination problem in InAlN layers in close coupled showerhead reactors;Applied Physics Express;2019-03-25
5. Enhanced structural and electrical properties of nonpolar a-plane p-type AlGaN/GaN superlattices;Superlattices and Microstructures;2019-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3