The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN:Mg grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
2. B. Schineller, A. Guttzeit, O. Schön, M. Heuken, K. Heime, R. Beccard, Proc. 7th Int. Conf. on SiC, III-Nitrides and Rel. Materials, Materials Science Forum, vols. 264–268, 1998, p. 1397.
3. B. Schineller, A. Guttzeit, F. Vertommen, O. Schön, M. Heuken, K. Heime, R. Beccard, J. Crystal Growth 189/190 (1998) 798.
4. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
5. C.G. Van de Walle, Phys. Rev. B 56 (1997) R10 020.
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