Experimental study of the kinetically-limited decomposition of ZnGeAs2 and its role in determining optimal conditions for thin film growth-Reference-Cited by-同舟云学术

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Experimental study of the kinetically-limited decomposition of ZnGeAs2 and its role in determining optimal conditions for thin film growth

Published:2012-01 Issue:1 Volume:338 Page:267-271
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Vahidi M.,Tang Z.Z.,Tucker J.,Peshek T.J.,Zhang L.,Kopas C.,Singh R.K.,van Schilfgaarde M.,Newman N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Growth and physical properties of amorphous and single crystal ZnGeAs2 layers deposited on (100)GaAs by sputter deposition in excess Zn and As4

2. Molecular beam epitaxial growth of II–V semiconductor Zn3As2 and II–IV–V chalcopyrite ZnGeAs2

3. Organometallic vapor‐phase‐epitaxial growth and characterization of ZnGeAs2on GaAs

4. Growth of NLO Chalcopyrite Materials by Omvpe

5. Ternary Chalcopyrite Semiconductors: Growth, Electronic, Properties and Applications;Shay,1975

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Criteria for improving the properties of ZnGeAs2 solar cells;Progress in Photovoltaics: Research and Applications;2012-02-27

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