Organometallic vapor‐phase‐epitaxial growth and characterization of ZnGeAs2on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342884
Reference11 articles.
1. Electronic charge density and internal crystallographic distortion in the chalcopyrite ZnGeAs2
2. Beyond the Binaries—The Chalcopyrite and Related Semiconducting Compounds
3. Spin‐polarized photoelectrons from semiconductors with chalcopyrite structure: ZnSiAs2 and ZnGeAs2
4. Growth and physical properties of amorphous and single crystal ZnGeAs2 layers deposited on (100)GaAs by sputter deposition in excess Zn and As4
5. Molecular beam epitaxial growth of II–V semiconductor Zn3As2 and II–IV–V chalcopyrite ZnGeAs2
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1. Role of anion–cation antisites in Zn-based II–IV–V2 chalcopyrite semiconductors;Journal of Applied Physics;2024-06-27
2. Effect of ${p}\mbox{--}{d}$ hybridization on half metallic properties of some diluted ${\bf{II}}\mbox{--}{\bf{IV}}\mbox{--}{{\bf{V}}}_{2}$ chalcopyrites for spintronic applications;Physica Scripta;2020-02-17
3. Origin of the anomalous trends in band alignment of GaX/ZnGeX2 (X = N, P, As, Sb) heterojunctions;Journal of Semiconductors;2019-04
4. Synthesis, structure, and optoelectronic properties of II–IV–V2materials;Journal of Materials Chemistry A;2017
5. Magnetocrystalline anisotropy of pure magnetic semiconductors of MnGeP2 and MnGeAs2: A first-principles study;Journal of Magnetism and Magnetic Materials;2016-12
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