InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs

Author:

Weiss Eliezer,Klin Olga,Grossmann Steve,Snapi Noam,Lukomsky Inna,Aronov Daniel,Yassen Michael,Berkowicz Eyal,Glozman Alex,Klipstein Philip,Fraenkel Avraham,Shtrichman Itay

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. In 1919, William Henry Eccles coined the term diode from the Greek word dia, meaning “through”, and ode (from οδος), meaning “path” (October 7th, 2011: 〈http://en.wikipedia.org/wiki/Diode#History〉). Bariode is a portmanteau of the term “barrier diode” that describes a semiconductor photo-detector in which a clear path through the device is provided for minority carriers from the photon absorbing layer, while the path of its majority carriers is blocked by means of a barrier. An n-type bariode has an n-type AL and BrL, while in a p-type bariode, their polarities are reversed.

2. XBn barrier photodetectors based on InAsSb with high operating temperatures

3. Scaling up antimonide wafer production: innovation and challenges for epitaxy ready GaSb and InSb substrates

4. Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

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