Effect of initial substrate conditions on growth of cubic silicon carbide-Reference-Cited by-同舟云学术

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Effect of initial substrate conditions on growth of cubic silicon carbide

Published:2011-06 Issue:1 Volume:324 Page:7-14
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Vasiliauskas R.,Marinova M.,Syväjärvi M.,Liljedahl R.,Zoulis G.,Lorenzzi J.,Ferro G.,Juillaguet S.,Camassel J.,Polychroniadis E.K.,Yakimova R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer

3. Defect origin and development in sublimation grown SiC boules

4. Surface preparation of -SiC for the epitaxial growth of 3C–SiC

5. A Vapor–Liquid–Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC(0001)

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05

2. Single composite target magnetron sputter deposition of crystalline and amorphous SiC thin films;Materials Research Express;2018-03-16

3. (Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes;ECS Transactions;2017-08-17

4. Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes;ECS Journal of Solid State Science and Technology;2017

5. Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111);Applied Physics Letters;2016-11-14

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