Solid phase epitaxy of amorphous Ge films deposited by PECVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction space solar cell exposed to charged particles
2. Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of solar cell's structure focusing on series resistance for high-efficiency concentrator photovoltaic systems
3. Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz
4. Reverse current reduction of Ge photodiodes on Si without post-growth annealing
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1. One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor;Electronic Materials;2021-10-10
2. Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications;Materials Science in Semiconductor Processing;2016-12
3. Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer;MRS Advances;2016-07-15
4. Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing;Japanese Journal of Applied Physics;2016-05-20
5. Epitaxial growth of germanium thin films on crystal silicon substrates by solid phase crystallization;Japanese Journal of Applied Physics;2015-03-24
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