Point defects in group-III nitride semiconductors studied by positron annihilation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals
2. Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
3. Characterization of Mg doped GaN by positron annihilation spectroscopy
4. Defects in Eu- and Tb-doped GaN probed using a monoenergetic positron beam
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