Relationship between defects and optical properties in Er-doped GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Erbium in a-Si:H
2. Photoluminescence spectra of Eu-doped GaN with various Eu concentrations
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4. Concentration quenching of Eu-related luminescence in Eu-doped GaN
5. Electroluminescence from erbium and oxygen coimplanted GaN
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1. Ab initio investigation of the AlN:Er system;Computational Materials Science;2017-10
2. Growth, luminescence and magnetic properties of GaN:Er semiconductor thin films grown by molecular beam epitaxy;Journal of Physics D: Applied Physics;2017-03-31
3. Erbium location into AlN films as probed by spatial resolution experimental techniques;Acta Materialia;2015-05
4. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12
5. Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN;Applied Physics Letters;2010-02
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