Concentration quenching of Eu-related luminescence in Eu-doped GaN-Reference-Cited by-同舟云学术

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Concentration quenching of Eu-related luminescence in Eu-doped GaN

Published:2004-07-12 Issue:2 Volume:85 Page:227-229
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bang Hyungjin,Morishima Shinichi,Sawahata Junji,Seo Jongwon,Takiguchi Mikio,Tsunemi Masato,Akimoto Katsuhiro,Nomura Masaharu

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1771806

Reference15 articles.

1. Er doping of GaN during growth by metalorganic molecular beam epitaxy

2. Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates

3. Visible cathodoluminescence of GaN doped with Dy, Er, and Tm

4. Growth of Eu Doped GaN and Electroluminescence from MIS Structure

5. Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy

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